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TSM7N65CIC0 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM7N65CIC0 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 9 page TSM7N65 650V N-Channel Power MOSFET 2/9 Version: C11 Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case TO-220 RӨJC 1.0 oC/W ITO-220 4.2 Thermal Resistance - Junction to Ambient RӨJA 62.5 oC/W Note: Surface mounted on FR4 board t ≤ 10sec Electrical Specifications (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 650 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 3A RDS(ON) -- 1.0 1.2 Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.0 -- 4.0 V Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V IDSS -- -- 1 uA VDS = 650V, VGS = 0V, TC=125ºC -- -- 50 Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±10 uA Forward Transfer Conductance VDS = 8V, ID = 1A gfs -- 3.7 -- S Diode Forward Voltage IS = 6A, VGS = 0V VSD -- -- 1.6 V Dynamic Total Gate Charge VDS = 300V, ID = 6A, VGS = 10V Qg -- 32 46 nC Gate-Source Charge Qgs -- 6 -- Gate-Drain Charge Qgd -- 11 -- Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Ciss -- 905 -- pF Output Capacitance Coss -- 115 -- Reverse Transfer Capacitance Crss -- 25 -- Switching Turn-On Delay Time VGS = 10V, ID = 6A, VDD = 300V, RG = 25 td(on) -- 14 -- nS Turn-On Rise Time tr -- 14 -- Turn-Off Delay Time td(off) -- 47 -- Turn-Off Fall Time tf -- 19 -- Reverse Recovery Time VGS = 0V, IS = 6A, dIF/dt = 100A/us tfr -- 638 -- nS Reverse Recovery Charge Qfr -- 4.8 -- uC Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: VDD = 50V, IAS=3.6A, L=30mH, VDS=500V Note 3: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 4: Essentially Independent of Operating Temperature |
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