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TSD1857 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSD1857 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 5 page TSD1857 Low Vcesat NPN Transistor 1/5 Version: B11 TO-126 TO-92 PRODUCT SUMMARY BVCBO 180V BVCEO 180V IC 1.5A VCE(SAT) 0.6V @ IC / IB = 1A / 100mA Features ● Low VCE(SAT) 0.6 @ IC / IB = 1A / 100mA (Typ.) ● High BVCEO Ordering Information Part No. Package Packing TSD1857CT B0 TO-92 1K / Bulk TSD1857CT A3 TO-92 2K / Ammo TSD1857CK B0 TO-126 500pcs / Bulk Structure ● Epitaxial Planar Type ● NPN Silicon Transistor Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 180 V Emitter-Base Voltage VEBO 5 V Collector Current DC IC 1.5 A Pulse 3 (note1) Collector Power Dissipation TO-92 PD 0.75 W TO-126 1 Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: 1. Single pulse, Pw=10ms, Duty≤50% 2. When mounted on a 40 x 50 x 0.7mm ceramic board. Electrical Specifications (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = 50uA, IE = 0 BVCBO 180 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 BVCEO 180 -- -- V Emitter-Base Breakdown Voltage IE = 50uA, IC = 0 BVEBO 5 -- -- V Collector Cutoff Current VCB = 160V, IE = 0 ICBO -- -- 1 uA Emitter Cutoff Current VEB = 4V, IC = 0 IEBO -- -- 1 uA Collector-Emitter Saturation Voltage IC / IB = 1A / 100mA VCE(SAT) -- -- 0.6 V Base-Emitter Saturation Voltage VCE = 5V, IC = 5mA VBE(ON) 0.45 -- 0.8 V DC Current Transfer Ratio VCE = 5V, IC = 200mA hFE 1 160 -- 320 VCE = 5V, IC = 500mA hFE 2 30 -- -- Transition Frequency VCE =5V, IE=150A, f=100MHz fT -- 140 -- MHz Output Capacitance VCB = 10V, f=1MHz Cob -- 27 -- pF Note: Pulse test: pulse width ≤380uS, Duty cycle≤2% Pin Definition: 1. Emitter 2. Collector 3. Base |
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