Q62702-F1055 datasheet(2/7 Pages) SIEMENS

Part #	Q62702-F1055

Description	Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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2 / 7 page

BF 997

Semiconductor Group

2

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

DC Characteristics

Unit

Values

Parameter

Symbol

min.

typ.

max.

V

Drain-source breakdown voltage

ID = 10

µA, – VG1S = – VG2S = 4 V

V(BR) DS

20

–

nA

Gate 1 source leakage current

± VG1S = 5 V, VG2S = VDS = 0

± IG1SS

––50

Gate 2 source leakage current

± VG2S = 5 V, VG1S = VDS = 0

± IG2SS

––50

Gate 1 source breakdown voltage

± IG1S = 10 mA, VG2S = VDS = 0

± V(BR) G1SS

8.5

–

14

Gate 2 source breakdown voltage

± IG2S = 10 mA, VG1S = VDS = 0

± V(BR) G2SS

8.5

–

14

V

Gate 1 source pinch-off voltage

VDS = 15 V, VG2S = 4 V, ID = 20

µA

– VG1S (p)

–

2.5

Gate 2 source pinch-off voltage

VDS = 15 V, VG1S = 0, ID = 20

µA

– VG2S (p)

–

2.0

mA

Drain current

VDS = 15 V, VG1S = 0, VG2S = 4 V

IDSS

2–20

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Q62702-F1055 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

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