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Q62702-F1287 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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Q62702-F1287 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 2 page Semiconductor Group 1 NPN Silicon RF Transistors BF 840 BF 841 q Suitable for common emitter RF, IF amplifiers q Low collector-base capacitance due to contact shield diffusion q Low output conductance Maximum Ratings Type Ordering Code Marking Package1) Pin Configuration BF 840 Q62702-F1240 NC SOT-23 1 2 3 B E C BF 841 Q62702-F1287 ND Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 4 Thermal Resistance Junction - ambient2) Rth JA ≤ 450 K/W Total power dissipation, TA ≤ 25 ˚C2) Ptot 280 mW Storage temperature range Tstg – 65 … + 150 Base current IB 2 Junction temperature Tj 150 ˚C Collector current IC 25 mA 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 07.94 |
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Similar Description - Q62702-F1287 |
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