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BF660W Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BF660W Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 4 page Semiconductor Group 1 Aug-14-1996 BF 660W PNP Silicon RF Transistor • For VHF oscillator applications Type Marking Ordering Code Pin Configuration Package BF 660W LEs Q62702-F1568 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 30 V Collector-base voltage VCBO 40 Emitter-base voltage VEBO 4 Collector current IC 25 mA Base current IB 5 Total power dissipation TS ≤ 93 °C Ptot 280 mW Junction temperature Tj 150 °C Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point RthJS 205 K/W |
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