SQ3460EV-T1-GE3 datasheet(4/11 Pages) VISHAY

Part #	SQ3460EV-T1-GE3

Description	Automotive N-Channel 20 V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQ3460EV

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Vishay Siliconix

S11-2359-Rev. D, 05-Dec-11

4

Document Number: 67037

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Source Drain Diode Forward Voltage

Threshold Voltage

Drain Source Breakdown vs. Junction Temperature

0.6

0.9

1.2

1.5

1.8

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 5.1 A

V

GS = 4.5 V

V

GS = 2.5 V

0.00

0.05

0.10

0.15

0.20

0.25

012345

V

GS - Gate-to-Source Voltage (V)

T

J = 150 °C

T

J = 25 °C

0.001

0.01

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

SD - Source-to-Drain Voltage (V)

T

J = 25 °C

T

J = 150 °C

-0.7

-0.5

-0.3

-0.1

0.1

0.3

- 50

- 25

0

25

50

75

100

125

150

175

T

J -Temperature (°C)

I

D = 250 μA

I

D = 5 mA

25

27

29

31

33

35

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 1 mA

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SQ3460EV-T1-GE3 Datasheet(PDF) 4 Page - Vishay Siliconix

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