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SQ3418EEV Datasheet(PDF) 1 Page - Vishay Siliconix |
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SQ3418EEV Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 11 page SQ3418EEV www.vishay.com Vishay Siliconix S11-2124-Rev. C, 07-Nov-11 1 Document Number: 65357 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition •TrenchFET® Power MOSFET • Typical ESD Protection 800 V • AEC-Q101 Qualifiedd •100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PRODUCT SUMMARY VDS (V) 40 RDS(on) () at VGS = 10 V 0.032 RDS(on) () at VGS = 4.5 V 0.048 ID (A) 8 Configuration Single N-Channel MOSFET (4) S (1, 2, 5, 6) D (3) G TSOP-6 Top V iew 6 4 1 2 3 5 2.85 mm 3 mm Marking Code: 8Bxxx ORDERING INFORMATION Package TSOP-6 Lead (Pb)-free and Halogen-free SQ3418EEV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °Ca ID 8 A TC = 125 °C 5 Continuous Source Current (Diode Conduction) IS 6 Pulsed Drain Currentb IDM 32 Single Pulse Avalanche Current L = 0.1 mH IAS 5 Single Pulse Avalanche Energy EAS 1.2 mJ Maximum Power Dissipationb TC = 25 °C PD 5 W TC = 125 °C 1.6 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mountc RthJA 110 °C/W Junction-to-Foot (Drain) RthJF 30 |
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