2

CGH55030F2_P2 Rev 3.1

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/wireless

Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and

the Cree logo are registered trademarks of Cree, Inc.

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter

Symbol

Rating

Units

Drain-Source Voltage

V

DSS

84

Volts

Gate-to-Source Voltage

V

GS

-10, +2

Volts

Storage Temperature

T

STG

-65, +150

˚C

Operating Junction Temperature

T

J

225

˚C

Maximum Forward Gate Current

I

GMAX

7.0

mA

T

S

245

˚C

Screw Torque

τ

60

in-oz

R

θJC

4.8

˚C/W

T

C

-40, +150

˚C

Note:

1

Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp

2

Measured for the CGH55030 at P

3

See also, the Power Dissipation De-rating Curve on Page 5.

Electrical Characteristics (T

Characteristics

Symbol

Min.

Typ.

Max.

Units

Conditions

Gate Threshold Voltage

V

GS(th)

-3.8

-3.3

–2.3

V

DC

V

Gate Quiescent Voltage

V

GS(Q)

–

-3.0

–

V

DC

V

Saturated Drain Current

I

DS

5.8

7.0

–

A

V

Drain-Source Breakdown Voltage

V

BR

120

–

–

V

DC

V

Small Signal Gain

G

SS

9.0

11.0

-

dB

V

P

SAT

20

30

–

W

V

η

50

60

–

%

V

Output Mismatch Stress

VSWR

-

–

10 : 1

Y

No damage at all phase angles,

V

Dynamic Characteristics

Input Capacitance

C

GS

–

9.0

–

pF

V

Output Capacitance

C

DS

–

2.6

–

pF

V

Feedback Capacitance

C

GD

–

0.4

–

pF

V

Notes:

1

Measured on wafer prior to packaging.

2

Measured in CGH55030-TB.

3

P

4

Drain Efficiency = P