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CGH55030F2 Datasheet(PDF) 2 Page - Cree, Inc |
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CGH55030F2 Datasheet(HTML) 2 Page - Cree, Inc |
2 / 10 page 2 CGH55030F2_P2 Rev 3.1 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Drain-Source Voltage V DSS 84 Volts Gate-to-Source Voltage V GS -10, +2 Volts Storage Temperature T STG -65, +150 ˚C Operating Junction Temperature T J 225 ˚C Maximum Forward Gate Current I GMAX 7.0 mA Soldering Temperature1 T S 245 ˚C Screw Torque τ 60 in-oz Thermal Resistance, Junction to Case2 R θJC 4.8 ˚C/W Case Operating Temperature2,3 T C -40, +150 ˚C Note: 1 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp 2 Measured for the CGH55030 at P DISS = 28 W. 3 See also, the Power Dissipation De-rating Curve on Page 5. Electrical Characteristics (T C = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics1 Gate Threshold Voltage V GS(th) -3.8 -3.3 –2.3 V DC V DS = 10 V, ID = 7.2 mA Gate Quiescent Voltage V GS(Q) – -3.0 – V DC V DS = 28 V, ID = 250 mA Saturated Drain Current I DS 5.8 7.0 – A V DS = 6.0 V, VGS = 2 V Drain-Source Breakdown Voltage V BR 120 – – V DC V GS = -8 V, ID = 7.2 mA RF Characteristics2 (T C = 25˚C, F0 = 5.65 GHz unless otherwise noted) Small Signal Gain G SS 9.0 11.0 - dB V DD = 28 V, IDQ = 250 mA Power Output3 P SAT 20 30 – W V DD = 28 V, IDQ = 250 mA Drain Efficiency4 η 50 60 – % V DD = 28 V, IDQ = 250 mA, PSAT Output Mismatch Stress VSWR - – 10 : 1 Y No damage at all phase angles, V DD = 28 V, IDQ = 250 mA, PSAT Dynamic Characteristics Input Capacitance C GS – 9.0 – pF V DS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance C DS – 2.6 – pF V DS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance C GD – 0.4 – pF V DS = 28 V, Vgs = -8 V, f = 1 MHz Notes: 1 Measured on wafer prior to packaging. 2 Measured in CGH55030-TB. 3 P SAT is defined as IG = 0.72 mA. 4 Drain Efficiency = P OUT / PDC |
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