PSMN069-100YS datasheet(6/15 Pages) PHILIPS

Part #	PSMN069-100YS

Description	N-channel LFPAK 100 V 72.4 m廓 standard level MOSFET

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PSMN069-100YS

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Product data sheet

Rev. 02 — 25 October 2010

6 of 15

NXP Semiconductors

PSMN069-100YS

N-channel LFPAK 100 V 72.4 m

Ω standard level MOSFET

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source breakdown

voltage

ID = 0.25 mA; VGS =0V; Tj = -55 °C

90

-

V

ID = 0.25 mA; VGS =0V; Tj = 25 °C

100

-

V

VGS(th)

gate-source threshold voltage

ID =1mA; VDS =VGS; Tj =175 °C;

see Figure 10

1.2

--V

ID =1mA; VDS =VGS; Tj =25 °C;

see Figure 10; see Figure 11

2.3

34V

ID =1mA; VDS =VGS; Tj =-55 °C;

see Figure 10

--4.7

V

IDSS

drain leakage current

VDS = 100 V; VGS =0V; Tj = 125 °C

--50

µA

VDS = 100 V; VGS =0V; Tj = 25 °C

-

0.07

2

µA

IGSS

gate leakage current

VGS =20V; VDS =0V; Tj = 25 °C

-

10

100

nA

VGS =-20 V; VDS =0V; Tj = 25 °C

-

10

100

nA

RDSon

drain-source on-state

resistance

VGS =10V; ID =5A; Tj =100 °C;

see Figure 12

-

130

m

Ω

VGS =10V; ID =5A; Tj =175 °C;

see Figure 12

-

149

202.7

m

Ω

VGS =10V; ID =5A; Tj =25°C;

see Figure 13

-

56.6

72.4

m

Ω

RG

internal gate resistance (AC)

f = 1 MHz

-

0.67

-

Ω

Dynamic characteristics

QG(tot)

total gate charge

ID =15A; VDS =50V; VGS =10V;

see Figure 14; see Figure 15

-14

-

nC

ID =0A; VDS =0 V; VGS =10V

-

11

-

nC

QGS

gate-source charge

ID =15A; VDS =50V; VGS =10V;

see Figure 14; see Figure 15

-3.9

-nC

QGS(th)

pre-threshold gate-source

charge

ID =15A; VDS =50V; VGS =10V;

see Figure 14

-2.2

-nC

QGS(th-pl)

post-threshold gate-source

charge

-1.7

-nC

QGD

gate-drain charge

ID =15A; VDS =50V; VGS =10V;

see Figure 14; see Figure 15

-4.8

-nC

VGS(pl)

gate-source plateau voltage

VDS = 50 V; see Figure 14;

see Figure 15

-4.7

-V

Ciss

input capacitance

VDS =50V; VGS = 0 V; f = 1 MHz;

Tj = 25 °C; see Figure 16

-

645

-

pF

Coss

output capacitance

-

63

-

pF

Crss

reverse transfer capacitance

-

43

-

pF

td(on)

turn-on delay time

VDS =50V; RL =3.3 Ω; VGS =10 V;

RG(ext) =4.7 Ω; Tj =25°C

-10

-

ns

tr

rise time

-

7

-

ns

td(off)

turn-off delay time

-

19

-

ns

tf

fall time

-5

-ns

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