PSMN016-100YS_11 datasheet(2/15 Pages) PHILIPS

Part #	PSMN016-100YS

Description	N-channel 100 V 16.3 m廓 standard level MOSFET in LFPAK

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PSMN016-100YS

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Product data sheet

Rev. 4 — 27 September 2011

2 of 15

NXP Semiconductors

PSMN016-100YS

N-channel 100 V 16.3 m

Ω standard level MOSFET in LFPAK

2.

Pinning information

3.

Ordering information

Dynamic characteristics

QGD

gate-drain charge

VGS =10 V; ID =30A;

VDS =50V; see Figure 14;

see Figure 15

-16

-nC

QG(tot)

total gate charge

-

54

-

nC

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-source

avalanche energy

VGS =10 V; Tj(init) =25 °C;

ID =51A; Vsup ≤ 100 V;

unclamped; RGS =50 Ω

--87

mJ

Table 1.

Quick reference data …continued

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 2.

Pinning information

Symbol

Description

Simplified outline

Graphic symbol

1S

source

SOT669 (LFPAK; Power-SO8)

2S

source

3S

source

4

G

gate

mb

D

mounting base; connected to drain

mb

1234

S

D

G

mbb076

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PSMN016-100YS

LFPAK; Power-SO8

plastic single-ended surface-mounted package; 4 leads

SOT669

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