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PSMN016-100YS Datasheet(PDF) 2 Page - NXP Semiconductors |
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PSMN016-100YS Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 15 page PSMN016-100YS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 — 27 September 2011 2 of 15 NXP Semiconductors PSMN016-100YS N-channel 100 V 16.3 m Ω standard level MOSFET in LFPAK 2. Pinning information 3. Ordering information Dynamic characteristics QGD gate-drain charge VGS =10 V; ID =30A; VDS =50V; see Figure 14; see Figure 15 -16 -nC QG(tot) total gate charge - 54 - nC Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy VGS =10 V; Tj(init) =25 °C; ID =51A; Vsup ≤ 100 V; unclamped; RGS =50 Ω --87 mJ Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source SOT669 (LFPAK; Power-SO8) 2S source 3S source 4 G gate mb D mounting base; connected to drain mb 1234 S D G mbb076 Table 3. Ordering information Type number Package Name Description Version PSMN016-100YS LFPAK; Power-SO8 plastic single-ended surface-mounted package; 4 leads SOT669 |
Similar Part No. - PSMN016-100YS_11 |
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Similar Description - PSMN016-100YS_11 |
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