PSMN4R3-100ES datasheet(4/14 Pages) PHILIPS

Part #	PSMN4R3-100ES

Description	N-channel 100 V 4.3 m廓 standard level MOSFET in I2PAK

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PSMN4R3-100ES

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Product data sheet

Rev. 1 — 31 October 2011

4 of 14

NXP Semiconductors

PSMN4R3-100ES

N-channel 100 V 4.3 m

Ω standard level MOSFET in I2PAK

5.

Thermal characteristics

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-mb)

thermal resistance from junction to mounting

base

see Figure 4

-

0.22

0.44

K/W

Rth(j-a)

thermal resistance from junction to ambient

Vertical in free air

-

60

-

K/W

Fig 4.

Transient thermal impedance from junction to mounting base as a function of pulse duration

003aaf733

single shot

0.2

0.1

0.05

0.02

10

-3

10

-2

10

-1

1

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

1

tp (s)

Zth(j-mb)

(K/W)

d = 0.5

tp

T

P

t

tp

T

 =

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PSMN4R3-100ES Datasheet(PDF) 4 Page - NXP Semiconductors

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