PSMN3R5-30LL_11 datasheet(6/15 Pages) PHILIPS

Part #	PSMN3R5-30LL

Description	N-channel DFN3333-8 30 V 3.6 m廓 logic level MOSFET

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PSMN3R5-30LL

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Product data sheet

Rev. 4 — 12 December 2011

6 of 15

NXP Semiconductors

PSMN3R5-30LL

N-channel DFN3333-8 30 V 3.6 m

Ω logic level MOSFET

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source breakdown voltage

ID = 0.25 mA; VGS =0V; Tj = -55 °C

27

-

V

ID = 0.25 mA; VGS =0V; Tj = 25 °C

30

--V

VGS(th)

gate-source threshold voltage

ID =1 mA; VDS =VGS; Tj =150 °C;

see Figure 10

0.5

--V

ID =1 mA; VDS =VGS; Tj =25°C;

see Figure 11; see Figure 10

1.3

1.7

2.15

V

ID =1 mA; VDS =VGS; Tj =-55 °C;

see Figure 10

--2.6

V

IDSS

drain leakage current

VDS =30V; VGS =0V; Tj = 25 °C

-

0.05

1

µA

VDS =30V; VGS =0V; Tj = 125 °C

-

50

µA

IGSS

gate leakage current

VGS =20V; VDS =0V; Tj = 25 °C

-

5

100

nA

VGS =-20 V; VDS =0V; Tj = 25 °C

-

5

100

nA

RDSon

drain-source on-state resistance

VGS =10V; ID =10 A; Tj =100 °C;

see Figure 12

--5

m

Ω

VGS = 4.5 V; ID =10A; Tj =25°C;

see Figure 13

-4.3

5.6

m

Ω

VGS =10V; ID =10 A; Tj =150 °C;

see Figure 12

-5.4

6.5

m

Ω

VGS =10V; ID =10 A; Tj =25 °C;

see Figure 13

-3

3.6

m

Ω

RG

internal gate resistance (AC)

f = 1 MHz

-

2.4

-

Ω

Dynamic characteristics

QG(tot)

total gate charge

ID =15 A; VDS =15V; VGS =4.5 V;

see Figure 14; see Figure 15

-18

-nC

ID =15 A; VDS =15V; VGS =10V;

see Figure 14; see Figure 15

-37

-nC

ID =0 A; VDS =0 V; VGS =10 V

-

33

-

nC

QGS

gate-source charge

ID =15 A; VDS =15V; VGS =10V;

see Figure 14; see Figure 15

-6

-nC

QGS(th)

pre-threshold gate-source charge

ID =15 A; VDS =15V; VGS =10V;

see Figure 14

-3.4

-nC

QGS(th-pl)

post-threshold gate-source

charge

-2.5

-nC

QGD

gate-drain charge

ID =15 A; VDS =15V; VGS =10V;

see Figure 14; see Figure 15

-5

-nC

VGS(pl)

gate-source plateau voltage

VDS = 15 V; see Figure 14;

see Figure 15

-2.7

-V

Ciss

input capacitance

VDS =15V; VGS = 0 V; f = 1 MHz;

Tj = 25 °C; see Figure 16

-

2061

-

pF

Coss

output capacitance

-

409

-

pF

Crss

reverse transfer capacitance

-

177

-

pF

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