PSMN3R3-80ES

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 1 — 31 October 2011

6 of 14

NXP Semiconductors

PSMN3R3-80ES

N-channel 80 V, 3.3 m

Ω standard level MOSFET in I2PAK

[1]

Measured 3 mm from package.

Source-drain diode

source-drain voltage

see Figure 17

-0.8

1.2

V

reverse recovery time

-63

-ns

recovered charge

-

121

-

nC

Table 6.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 5.

Forward transconductance as a function of

drain current; typical values

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 7.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

Fig 8.

Input and reverse transfer capacitances as a

function of gate-source voltage; typical values

003aaf602

0

50

100

150

200

250

0

2040

6080

I

g

fs

(S)

003aaf603

0

25

50

75

0246

V

I

D

(A)

T

T

003aag797

0

2

4

6

8

04

8

12

16

20

(m

Ω)

003aaf606

0

4000

8000

12000

16000

10

-1

1

10

10

2

V

C

(pF)

C

iss

C

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