PSMN2R6-30YLC

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 01 — 2 May 2011

3 of 15

NXP Semiconductors

PSMN2R6-30YLC

N-channel 30 V 2.8m

Ω logic level MOSFET in LFPAK using NextPower

5.

Limiting values

[1]

Continuous current is limited by package.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

25 °C

-

30

V

drain-gate voltage

25 °C

-30

V

gate-source voltage

-20

20

V

drain current

[1]

-

100

A

[1]

-

100

A

peak drain current

see Figure 4

-

575

A

total power dissipation

-

106

W

storage temperature

-55

175

°C

junction temperature

-55

175

°C

peak soldering temperature

-

260

°C

electrostatic discharge voltage

MM (JEDEC JESD22-A115)

460

-

V

Source-drain diode

source current

-

96

A

peak source current

-

575

A

Avalanche ruggedness

non-repetitive drain-source

avalanche energy

see Figure 3

-50

mJ

Fig 1.

Continuous drain current as a function of

mounting base temperature

Fig 2.

Normalized total power dissipation as a

function of mounting base temperature

003a a f659

0

30

60

90

120

150

0

50

100

150

200

°C)

(A)

(1)

0

200

150

50

100

03na19

40

80

120

(%)

0