W988D2FBJX6I datasheet(8/68 Pages) WINBOND

Part #	W988D2FBJX6I

Description	256Mb Mobile LPSDR

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Manufacturer	WINBOND [Winbond]

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W988D6FB / W988D2FB

256Mb Mobile LPSDR

Publication Release Date : May, 18, 2011

- 8 -

Revision A01-002

6. ELECTRICAL CHARACTERISTICS

6.1 Absolute Maximum Ratings

PARAMETER

SYMBOL

VALUES

UNITS

MIN

MAX

Voltage on VDD relative to VSS

VDD

−0.3

2.7

V

Voltage on VDDQ relative to VSS

VDDQ

−0.3

2.7

V

Voltage on any pin relative to VSS

VIN, VOUT

−0.3

2.7

V

Operating Temperature

Tc

-25

-40

85

°C

Storage Temperature

TSTG

−55

150

°C

Short Circuit Output Current

IOUT

±50

mA

Power Dissipation

PD

1.0

W

6.2 Operating Conditions

(Notes : 1)

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Supply Voltage

VDD

1.7

1.8

1.95

V

Supply Voltage (for I/O Buffer)

VDDQ

1.7

1.8

1.95

V

Input High level Voltage

VIH

0.8*VDDQ

-

VDDQ + 0.3

V

Input Low level Voltage

VIL

-0.3

-

+0.3

V

LVCOMS Output H Level Voltage

(IOUT = -0.1 mA )

VOH

0.9xVDDQ

-

V

LVCMOS Output L Level Voltage

(IOUT = +0.1 mA )

VOL

-

0.2

V

Input Leakage Current

(0V

VIN

VDD, all other pins

not under test = 0V)

II(L)

-1

-

1

A

Output Leakage Current (Output disable ,

0V

VOUT

VDDQ)

IO(L)

-5

-

5

A

Note: VIH(max) = VDD/ VDDQ+1.2V for pulse width < 5 ns , VIL(min) = VSS/ VSSQ-1.2V for pulse width < 5 ns

6.3 Capacitance

(VDD = 1.7V~1.95V, f = 1 MHz, Ta = 25°C)

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

Input Capacitance

(A[ n : 0] , BA0, BA1,

CS , RAS , CAS , WE , DQM, CKE)

CI

1.5

3.0

pf

Input Capacitance (CLK)

CCLK

1.5

3.5

pf

Input/Output capacitance

CIO

3.0

5.0

pf

Note: These parameters are periodically sampled and not 100% tested.

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