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Q62702-C2418 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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Q62702-C2418 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 4 page  Semiconductor Group 1 Nov-27-1996 BCR 191S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built in bias resistor (R1=22kΩ, R2=22kΩ) Type Marking Ordering Code Pin Configuration Package BCR 191S WOs Q62702-C2418 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10 Input on Voltage Vi(on) 30 DC collector current IC 100 mA Total power dissipation, TS = 115°C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction ambient 1) RthJA ≤ 275 K/W Junction - soldering point RthJS ≤ 140 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu |
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