 |
 |
|
| BCR191S |
|
||||||||||||
 SIEMENS
|
| ||||||||||||
|
2 page 
Semiconductor Group 2 Nov-27-1996 BCR 191S Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 V(BR)CEO 50 - - V Collector-base breakdown voltage IC = 10 µA, IB = 0 V(BR)CBO 50 - - Collector cutoff current VCB = 40 V, IE = 0 ICBO - - 100 nA Emitter cutoff current VEB = 10 V, IC = 0 IEBO - - 350 µA DC current gain IC = 5 mA, VCE = 5 V hFE 50 - - - Collector-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA VCEsat - - 0.3 V Input off voltage IC = 100 µA, VCE = 5 V Vi(off) 0.8 - 1.5 Input on Voltage IC = 2 mA, VCE = 0.3 V Vi(on) 1 - 2.5 Input resistor R1 15 22 29 k Ω Resistor ratio R1/R2 0.9 1 1.1 - AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz fT - 200 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 3 - pF 1) Pulse test: t < 300 µs; D < 2% |
