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Q62702-C2261 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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Q62702-C2261 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 4 page Semiconductor Group 1 Nov-26-1996 BCR 148 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=47kΩ, R2=47kΩ) Type Marking Ordering Code Pin Configuration Package BCR 148 WEs Q62702-C2261 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10 Input on Voltage Vi(on) 50 DC collector current IC 70 mA Total power dissipation, TS = 102°C Ptot 200 mW Junction temperature Tj 150 °C Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction ambient 1) RthJA ≤ 350 K/W Junction - soldering point RthJS ≤ 240 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu |
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Similar Description - Q62702-C2261 |
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