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VIT5200 Datasheet(PDF) 1 Page - Vishay Siliconix |
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VIT5200 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Document Number: 89176 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 09-Dec-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A VT5200, VFT5200, VBT5200, VIT5200 Vishay General Semiconductor New Product FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AC, ITO-220AC, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 5.0 A VRRM 200 V IFSM 80 A VF at IF = 5.0 A 0.65 V TJ max. 150 °C TMBS ® NC K K A NC A K PIN 1 CASE PIN 2 PIN 1 PIN 2 TO-220AC TO-263AB TO-262AA ITO-220AC VT5200 VFT5200 VIT5200 VBT5200 K HEATSINK A NC NC A K HEATSINK 1 2 1 2 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VT5200 VFT5200 VBT5200 VIT5200 UNIT Maximum repetitive peak reverse voltage VRRM 200 V Maximum average forward rectified current (fig. 1) IF(AV) 5.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 80 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH EAS 30 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C IRRM 0.5 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min VAC 1500 V Operating junction and storage temperature range TJ, TSTG - 40 to + 150 °C |
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