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VSSB420S-M3-52T Datasheet(PDF) 1 Page - Vishay Siliconix |
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VSSB420S-M3-52T Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page Document Number: 89317 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 10-Nov-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 Surface Mount Trench MOS Barrier Schottky Rectifier VSSB420S Vishay General Semiconductor New Product FEATURES • Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS For use in high frequency converters, freewheeling diodes, DC/DC converters and polarity protection applications. MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free and RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end Notes (1) Units mounted on PCB with 20 mm x 20 mm pad areas (2) Free air, mounted on recommended PCB 1 oz. pad area PRIMARY CHARACTERISTICS IF(AV) 4.0 A VRRM 200 V IFSM 40 A VF at IF = 4.0 A 0.71 V TJ max. 150 °C DO-214AA (SMB) TMBS ® MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VSSB420S UNIT Device marking code V4D Maximum repetitive peak reverse voltage VRRM 200 V Maximum DC forward current IF (1) 4.0 A IF (2) 1.8 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 40 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction and storage temperature range TJ, TSTG - 40 to + 150 °C |
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