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BCR108S Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part No. BCR108S
Description  NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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 3 page
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Semiconductor Group
3
Nov-26-1996
BCR 108S
DC Current Gain
hFE = f (IC)
VCE = 5V (common emitter configuration)
10
-1
10
0
10
1
mA
I
C
0
10
1
10
2
10
3
10
-
h
FE
Collector-Emitter Saturation Voltage
VCEsat = f(IC), hFE = 20
0.0
0.1
0.2
0.3
V
0.5
V
CEsat
0
10
1
10
2
10
mA
I
C
Input on Voltage
Vi(on) = f(IC)
VCE = 0.3V (common emitter configuration)
10
-1
10
0
10
1
V
V
i(on)
-1
10
0
10
1
10
2
10
mA
I
C
Input off voltage
Vi(off) = f(IC)
VCE = 5V (common emitter configuration)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
1.0
V
i(off)
-3
10
-2
10
-1
10
0
10
1
10
mA
I
C




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