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BCR108S Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. BCR108S
Description  NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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 2 page
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Semiconductor Group
2
Nov-26-1996
BCR 108S
Electrical Characteristics at
TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
V(BR)CEO
50
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IB = 0
V(BR)CBO
50
-
-
Collector cutoff current
VCB = 40 V, IE = 0
ICBO
-
-
100
nA
Emitter cutoff current
VEB = 5 V, IC = 0
IEBO
-
-
164
DC current gain
IC = 5 mA, VCE = 5 V
hFE
70
-
-
-
Collector-emitter saturation voltage 1)
IC = 50 mA, IB = 2.5 mA
VCEsat
-
-
0.3
V
Input off voltage
IC = 100 µA, VCE = 5 V
Vi(off)
0.4
-
0.8
Input on Voltage
IC = 2 mA, VCE = 0.3 V
Vi(on)
0.5
-
1.1
Input resistor
R1
1.5
2.2
2.9
k
Resistor ratio
R1/R2
0.042
0.047
0.052
-
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
fT
-
170
-
MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
-
3
-
pF
1) Pulse test: t < 300
µs; D < 2%




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