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VSML3710 Datasheet(PDF) 4 Page - Vishay Siliconix

Part # VSML3710
Description  High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VSML3710 Datasheet(HTML) 4 Page - Vishay Siliconix

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www.vishay.com
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81300
4
Rev. 1.4, 03-Nov-09
VSML3710
Vishay Semiconductors High Power Infrared Emitting Diode,
940 nm, GaAlAs/GaAs
Fig. 9 - Relative Radiant Power vs. Wavelength
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
SOLDER PROFILE
Fig. 11 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 3, acc. to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
890
0
0.25
0.5
0.75
1.0
1.25
- Wavelength (nm)
14291
I
F = 100 mA
λ
990
940
0.4
0.2
0
94 8013
0.6
0.9
0.8
30°
10°
20°
40°
50°
60°
70°
80°
0.7
1.0
20541
Mounting Pad Layout
1.2
1.6 (1.9)
4
area covered with
solder resist
3.5 ± 0.2
3 + 0.15
CA
Pin identification
Ø 2.4
technical drawings
according to DIN
specifications
Drawing-No.: 6.541-5067.01-4
Issue: 5; 04.11.08
0
50
100
150
200
250
300
0
50
100
150
200
250
300
Time (s)
240 °C
245 °C
max. 260 °C
max. 120 s
max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s max. ramp down 6 °C/s
19841
255 °C


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