Document Number: 81470

www.vishay.com

Rev. 1.3, 03-Nov-09

1

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

VSMF4710

Vishay Semiconductors

DESCRIPTION

VSMF4710 is an infrared, 870 nm emitting diode in GaAlAs

double hetero (DH) technology with high radiant power and

high speed, molded in a PLCC-2 package for surface

mounting (SMD).

FEATURES

• Package type: surface mount

• Package form: PLCC-2

• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75

• Peak wavelength:

λ

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity:

ϕ = ± 60°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Floor life: 168 h, MSL 3, acc. J-STD-020

• Lead (Pb)-free reflow soldering

• AEC-Q101 qualified

• Compliant

to

RoHS

directive

2002/95/EC

and

in

accordance to WEEE 2002/96/EC

• Find out more about Vishay’s Automotive Grade Product

APPLICATIONS

• High speed IR data transmission

• High power emitter for low space applications

• High performance transmissive or reflective sensors

Note

Test conditions see table “Basic Characteristics”

Note

MOQ: minimum order quantity

94 8553

PRODUCT SUMMARY

COMPONENT

ϕ (deg)

λ

VSMF4710

10

± 60

870

15

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

VSMF4710-GS08

Tape and reel

MOQ: 7500 pcs, 1500 pcs/reel

PLCC-2

VSMF4710-GS18

Tape and reel

MOQ: 8000 pcs, 8000 pcs/reel

PLCC-2