Document Number: 94629

For technical questions within your region, please contact one of the following:

www.vishay.com

Revision: 17-May-10

3

VSKT26.., VSKH26.., VSKL26.., VSKN26.. Series

ADD-A-PAK Generation VII Power Modules

Thyristor/Diode and Thyristor/Thyristor, 27 A

Vishay Semiconductors

Note

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak gate power

10

W

Maximum average gate power

2.5

Maximum peak gate current

2.5

A

Maximum peak negative gate voltage

10

V

Maximum gate voltage required to trigger

Anode supply = 6 V

resistive load

4.0

2.5

1.7

Maximum gate current required to trigger

Anode supply = 6 V

resistive load

270

mA

150

80

Maximum gate voltage that will not trigger

0.25

V

Maximum gate current that will not trigger

6

mA

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak reverse and off-state

15

mA

Maximum RMS insulation voltage

50 Hz

3000 (1 min)

3600 (1 s)

V

Maximum critical rate of rise of off-state voltage

dV/dt

1000

V/μs

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Junction operating and storage

temperature range

- 40 to 125

°C

Maximum internal thermal resistance,

junction to case per leg

DC operation

0.76

°C/W

Typical thermal resistance,

case to heatsink per module

Mounting surface flat, smooth and greased

0.1

Mounting torque ± 10 %

to heatsink

A mounting compound is recommended and the

torque should be rechecked after a period of

3 hours to allow for the spread of the compound.

4

Nm

busbar

3

Approximate weight

75

g

2.7

oz.

Case style

JEDEC

TO-240AA compatible

ΔR CONDUCTION PER JUNCTION

DEVICES

SINE HALF WAVE CONDUCTION

RECTANGULAR WAVE CONDUCTION

UNITS

180°

120°

90°

60°

30°

180°

120°

90°

60°

30°

VSK.26..

0.212

0.258

0.330

0.466

0.72

0.166

0.276

0.357

0.482

0.726

°C/W