Document Number: 94422

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Revision: 19-Jul-10

7

VSK.F200..P Series

Fast Thyristor/Diode and Thyristor/Thyristor

(MAGN-A-PAK Power Modules), 200 A

Vishay Semiconductors

Fig. 14 - Maximum On-State Energy Power Loss Characteristics

Fig. 15 - Gate Characteristics

1E1

1E2

1E3

1E4

1E11E2

1E31E4

10 joules per pulse

5

2.5

1

0.5

0.25

0.1

0.05

Pulse Basewidth (µs)

VSK.F200.. Series

Sinusoid al p ulse

tp

1E4

E1

1E2

1E3

1E4

10 joules per pulse

5

2.5

1

0.5

0.25

0.1

0.05

Pulse Basewidth (µs)

VSK.F200.. Series

Trapezoidal pulse

di/dt 50A/ µs

tp

1E1

0.1

1

10

100

0.01

0.1

1

10

100

VGD

IGD

(b)

(a)

(2)

(3)

Instantaneous Gate Current (A)

a) Rec ommended load line for

b) Rec ommended load line for

Rectangular gate pulse

rated di/ dt : 10V, 10ohms

<=30% rated di/ dt : 10V, 20ohms

VSK.F200.. Series

Frequenc y Limited by PG(AV)

(1) PGM = 8W, tp = 25ms

(2) PGM = 20W, tp = 1ms

(3) PGM = 40W, tp = 5ms

(4) PGM = 80W, tp = 2.5ms

(1)

(4)