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VSKN26-08 Datasheet(PDF) 2 Page - Vishay Siliconix |
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VSKN26-08 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94629 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 17-May-10 VSKT26.., VSKH26.., VSKL26.., VSKN26.. Series Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 27 A ELECTRICAL SPECIFICATIONS Notes (1) I2t for time tx = I2 √t x √tx (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 (3) 16.7 % x π x IAV < I < π x IAV (4) I > π x IAV VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V IRRM, IDRM AT 125 °C mA VSK.26 04 400 500 400 15 06 600 700 600 08 800 900 800 10 1000 1100 1000 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current (thyristors) IT(AV) 180° conduction, half sine wave, TC = 85 °C 27 A Maximum average forward current (diodes) IF(AV) Maximum continuous RMS on-state current, as AC switch IO(RMS) 60 Maximum peak, one-cycle non-repetitive on-state or forward current ITSM or IFSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 400 t = 8.3 ms 420 t = 10 ms 100 % VRRM reapplied 335 t = 8.3 ms 350 Maximum I2t for fusing I2t t = 10 ms No voltage reapplied Initial TJ = TJ maximum 800 A2s t = 8.3 ms 730 t = 10 ms 100 % VRRM reapplied 560 t = 8.3 ms 510 Maximum I2 √t for fusing I2 √t (1) t = 0.1 ms to 10 ms, no voltage reapplied TJ = TJ maximum 8000 A2 √s Maximum value or threshold voltage VT(TO) (2) Low level (3) TJ = TJ maximum 0.86 V High level (4) 1.09 Maximum value of on-state slope resistance rt (2) Low level (3) TJ = TJ maximum 9.58 m Ω High level (4) 7.31 Maximum peak on-state or forward voltage VTM ITM = π x IT(AV) TJ = 25 °C 1.65 V VFM IFM = π x IF(AV) Maximum non-repetitive rate of rise of turned on current dI/dt TJ = 25 °C, from 0.67 VDRM, ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs 150 A/μs Maximum holding current IH TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit 200 mA Maximum latching current IL TJ = 25 °C, anode supply = 6 V, resistive load 400 or I (RMS) I (RMS) |
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