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VSKT152 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # VSKT152
Description  Thyristor/Thyristor, 150 A (New INT-A-PAK Power Module)
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VSKT152 Datasheet(HTML) 2 Page - Vishay Siliconix

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www.vishay.com
For technical questions, contact: indmodules@vishay.com
Document Number: 94514
2
Revision: 04-May-10
VSKT152/04PbF
Vishay High Power Products
Thyristor/Thyristor, 150 A
(New INT-A-PAK Power Module)
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current
at case temperature
IT(AV)
180° conduction half sine wave
150
A
85
°C
Maximum RMS on-state current
IT(RMS)
As AC switch
330
A
Maximum peak, one-cycle
on-state, non-repetitive
surge current
ITSM
t = 10 ms
No voltage
reapplied
Sine half wave,
initial TJ =
TJ maximum
4000
t = 8.3 ms
4200
t = 10 ms
100 % VRRM
reapplied
3350
t = 8.3 ms
3500
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
80
kA2s
t = 8.3 ms
73
t = 10 ms
100 % VRRM
reapplied
56
t = 8.3 ms
51
Maximum I2
√t for fusing
I2
√t
t = 0.1 ms to 10 ms, no voltage reapplied
800
kA2√s
Value of threshold voltage
VT(TO)
TJ maximum
0.82
V
On-state slope resistance
rt
1.44
m
Ω
Maximum on-state voltage drop
VTM
Ipk =
π x IT(AV), TJ = 25 °C
1.48
V
Maximum holding current
IH
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
200
mA
Maximum latching current
IL
TJ = 25 °C, anode supply = 6 V, resistive load
400
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Typical delay time
tgd
TJ = 25 °C
Gate current = 1 A, dlg/dt = 1 A/μs
Vd = 0.67 % VDRM
1
μs
Typical rise time
tgr
2
Typical turn-off time
tq
ITM = 300 A, - dl/dt = 15 A/μs; TJ = TJ maximum
VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100
Ω
50 to 200
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = 125 °C
50
mA
RMS insulation voltage
VINS
50 Hz, circuit to base, all terminals shorted, t = 1 s
3500
V
Critical rate of rise of off-state voltage
dV/dt
TJ = TJ maximum, exponential to 67 % rated VDRM
1000
V/μs


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