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VSKT152 Datasheet(PDF) 2 Page - Vishay Siliconix |
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VSKT152 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 94514 2 Revision: 04-May-10 VSKT152/04PbF Vishay High Power Products Thyristor/Thyristor, 150 A (New INT-A-PAK Power Module) ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at case temperature IT(AV) 180° conduction half sine wave 150 A 85 °C Maximum RMS on-state current IT(RMS) As AC switch 330 A Maximum peak, one-cycle on-state, non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sine half wave, initial TJ = TJ maximum 4000 t = 8.3 ms 4200 t = 10 ms 100 % VRRM reapplied 3350 t = 8.3 ms 3500 Maximum I2t for fusing I2t t = 10 ms No voltage reapplied 80 kA2s t = 8.3 ms 73 t = 10 ms 100 % VRRM reapplied 56 t = 8.3 ms 51 Maximum I2 √t for fusing I2 √t t = 0.1 ms to 10 ms, no voltage reapplied 800 kA2√s Value of threshold voltage VT(TO) TJ maximum 0.82 V On-state slope resistance rt 1.44 m Ω Maximum on-state voltage drop VTM Ipk = π x IT(AV), TJ = 25 °C 1.48 V Maximum holding current IH TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit 200 mA Maximum latching current IL TJ = 25 °C, anode supply = 6 V, resistive load 400 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical delay time tgd TJ = 25 °C Gate current = 1 A, dlg/dt = 1 A/μs Vd = 0.67 % VDRM 1 μs Typical rise time tgr 2 Typical turn-off time tq ITM = 300 A, - dl/dt = 15 A/μs; TJ = TJ maximum VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 Ω 50 to 200 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = 125 °C 50 mA RMS insulation voltage VINS 50 Hz, circuit to base, all terminals shorted, t = 1 s 3500 V Critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, exponential to 67 % rated VDRM 1000 V/μs |
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