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New Product VSIB4A20 thru VSIB4A80 Vishay General Semiconductor Document Number: 89120 Revision: 14-Jul-09 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Figure 3. Typical Forward Characteristics Per Diode Figure 4. Typical Reverse Characteristics Per Diode Instantaneous Forward Voltage (V) 100 0.01 0.3 1.3 1.1 0.1 1 10 0.9 0.7 0.5 T J = 150 °C T J = 125 °C T J = 25 °C Percent of Rated Peak Reverse Voltage (%) 1000 0.01 20 100 0.1 10 100 80 60 40 T J = 150 °C T J = 125 °C T J = 25 °C 1 30 90 70 50 Figure 5. Typical Junction Capacitance Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode Reverse Voltage (V) 1000 1 0.1 100 10 100 10 1 t - Heating Time (s) 100 0.1 0.01 100 1 10 10 1 0.1 Case Style GSIB-3S 0.996 (25.3) 0.972 (24.7) 0.157 (4.0) Ref. 0.146 (3.70) 0.130 (3.30) 0.602 (15.3) 0.579 (14.7) 0.709 (18.0) 0.669 (17.0) 0.303 (7.7) 0.287 (7.3) 0.057 (1.45) 0.041 (1.05) 0.083 (2.10) 0.067 (1.70) 0.043 (1.10) 0.035 (0.90) 0.075 (1.90) 0.059 (1.50) 0.150 (3.80) 0.134 (3.40) 0.031 (0.80) 0.024 (0.60) 0.114 (2.90) 0.098 (2.50) 0.189 (4.80) 0.173 (4.40) 0.382 (9.70) 0.366 (9.30) Ø 0.134 (3.40) Ø 0.122 (3.10) |
