Q62702-C1692 datasheet(3/5 Pages) SIEMENS

Part #	Q62702-C1692

Description	PNP Silicon AF Transistors (For general AF applications High collector current High current gain)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

3

BC 807

BC 808

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

DC current gain1)

IC = 100 mA; VCE = 1 V

BC 807-16, BC 808-16

BC 807-25, BC 808-25

BC 807-40, BC 808-40

IC = 300 mA; VCE = 1 V

BC 807-16, BC 808-16

BC 807-25, BC 808-25

BC 807-40, BC 808-40

V

Collector-emitter breakdown voltage

IC = 10 mA

BC 807

BC 808

V(BR)CE0

45

25

–

nA

µA

Collector cutoff current

VCB = 25 V

VCB = 25 V, TA = 150 ˚C

ICB0

–

100

50

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-base breakdown voltage

IC = 100

µA

BC 807

BC 808

V(BR)CB0

50

30

–

Emitter-base breakdown voltage, IE = 10

µA

V(BR)EB0

5––

V

Collector-emitter saturation voltage1)

IC = 500 mA; IB = 50 mA

VCEsat

–

0.7

–

hFE

100

160

250

60

100

170

160

250

350

–

250

400

630

–

Base-emitter saturation voltage1)

IC = 500 mA; IB = 50 mA

VBEsat

––2

nA

Emitter cutoff current, VEB = 4 V

IEB0

–

100

MHz

Transition frequency

IC = 50 mA, VCE = 5 V, f = 20 MHz

fT

–

200

–

AC characteristics

pF

Output capacitance

VCB = 10 V, f = 1 MHz

Cobo

–10

–

Input capacitance

VEB = 0.5 V, f = 1 MHz

Cibo

–60

–

1)

Pulse test: t

≤ 300 µs, D ≤ 2%.

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Q62702-C1692 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

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