Document Number: 89179

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Revision: 09-Feb-10

1

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V40100PW

Vishay General Semiconductor

New Product

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Compliant

to

RoHS

directive

2002/95/EC

and

in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

MECHANICAL DATA

Case: TO-3PW

Molding compound meets UL 94 V-0 flammability rating

Base

P/N-M3

-

halogen-free

and

RoHS

compliant,

commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

2 x 20 A

100 V

300 A

280 mJ

0.61 V

150 °C

TO-3PW

TMBS

®

PIN 2

CASE

PIN 1

PIN 3

PARAMETER

SYMBOL

V40100PW

UNIT

Maximum repetitive peak reverse voltage

100

V

Maximum average forward rectified current (fig. 1)

per device

40

A

per diode

20

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

300

A

280

mJ

1.0

A

dV/dt

10 000

V/μs

Operating junction and storage temperature range

- 40 to + 150

°C