Part Name
         Description
V30150C-M3-4W

 Dual High-Voltage Trench MOS Barrier Schottky Rectifier ( 5 Page)


VISHAY
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Document Number: 89249
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 23-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V30150C, VI30150C
Vishay General Semiconductor
New Product
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Dissipation Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Transient Thermal Impedance
Fig. 6 - Typical Junction Capacitance
Case Temperature (°C)
40
30
0
0
25
50
75
100
125
150
175
Resistive or Inductive Load
Mounted on Specific Heatsink
20
10
0
2
6
14
02
8
12
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
6
4
10
10
4
12
8
16
14
18
D = t
p/T
t
p
T
Instantaneous Forward Voltage (V)
0
0.2
0.4
0.8
1.2
1.6
100
10
1
0.1
T
A = 100 °C
T
A = 25 °C
0.6
1.0
T
A = 150 °C
T
A = 125 °C
1.4
10
20
30
40
50
60
70
80
90
100
1
0.1
0.01
0.0001
100
10
Percent of Rated Peak Reverse Voltage (%)
0.001
T
A = 150 °C
T
A = 25 °C
T
A = 100 °C
T
A = 125 °C
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Junction to Case
1000
10 000
0.1
1
10
100
Reverse Voltage (V)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
10
100



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