VB20100C-E3-8W datasheet(3/5 Pages) VISHAY

Part #	VB20100C-E3-8W

Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Manufacturer	VISHAY [Vishay Siliconix]

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V20100C, VF20100C, VB20100C & VI20100C

Vishay General Semiconductor

Document Number: 88977

Revision: 24-Jun-09

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3

Figure 3. Typical Instantaneous Forward Characteristics Per Diode

Figure 4. Typical Reverse Characteristics Per Diode

Figure 5. Typical Junction Capacitance Per Diode

0.1

1

10

100

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

T

A = 150 °C

T

A = 125 °C

T

A = 25 °C

Instantaneous Forward Voltage (V)

0.001

0.01

0.1

1

10

100

10

20

30

40

50

60

70

80

90

100

Instantaneous Forward Voltage (V)

T

A = 150 °C

T

A = 125 °C

T

A = 25 °C

10

100

1000

10 000

0.1

1

10

100

Reverse Voltage (V)

T

J = 25 °C

f = 1.0 MHz

V

sig = 50 mVp-p

Figure 6. Typical Transient Thermal Impedance Per Diode

Figure 7. Typical Transient Thermal Impedance Per Diode

1

10

0.01

0.1

1

10

100

t - Pulse Duration (s)

Junction to Case

V(B,I)20100C

1

10

0.01

0.1

1

10

100

t - Pulse Duration (s)

Junction to Case

VF20100C

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VB20100C-E3-8W Datasheet(PDF) 3 Page - Vishay Siliconix

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