VI20120C-M3-4W datasheet(2/5 Pages) VISHAY

Part #	VI20120C-M3-4W

Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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For technical questions within your region, please contact one of the following:

Document Number: 89159

2

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Revision: 23-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

V20120C, VI20120C

Vishay General Semiconductor

New Product

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

≤ 40 ms

Note

(1) AEC-Q101 qualified

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Instantaneous forward voltage per diode

IF = 5 A

TA = 25 °C

VF (1)

0.62

-

V

IF = 10 A

0.81

0.90

IF = 5 A

TA = 125 °C

0.54

-

IF = 10 A

0.64

0.72

Reverse current per diode

VR = 90 V

TA = 25 °C

IR (2)

8-

μA

TA = 125 °C

6

-

mA

VR = 120 V

TA = 25 °C

-

700

μA

TA = 125 °C

14

45

mA

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V20120C

VI20120C

UNIT

Typical thermal resistance per diode

RθJC

2.8

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-220AB

V20120C-M3/4W

1.88

4W

50/tube

Tube

TO-262AA

VI20120C-M3/4W

1.45

4W

50/tube

Tube

TO-220AB

V20120CHM3/4W (1)

1.88

4W

50/tube

Tube

TO-262AA

VI20120CHM3/4W (1)

1.45

4W

50/tube

Tube

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VI20120C-M3-4W Datasheet(PDF) 2 Page - Vishay Siliconix

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