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UG30APT thru UG30DPT Vishay General Semiconductor Document Number: 88762 Revision: 05-Jun-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 4. Typical Reverse Leakage Characteristics Per Diode 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) T J = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 0 20 40 60 80 100 0.01 0.1 1 10 100 1000 Percent of Rated Peak Reverse Voltage (%) T J = 100 °C T J = 25 °C Figure 5. Reverse Switching Characteristics Per Diode Figure 6. Typical Junction Capacitance Per Diode 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 Junction Temperature (°C) I F = 15 A V R = 30 V dI/dt = 100 A/µs dI/dt = 50 A/µs dI/dt = 100 A/µs dI/dt = 150 A/µs dI/dt = 50 A/µs dI/dt = 20 A/µs dI/dt = 150 A/µs dI/dt = 20 A/µs 0.1 1 10 100 1 10 100 Reverse Voltage (V) T J = 125 °C f = 1.0 MHz V sig = 50 mVp-p PIN 1 PIN 3 CASE PIN 2 TO-247AD (TO-3P) 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 (8.2) 0.313 (7.9) 0.142 (3.6) 0.138 (3.5) 0.170 (4.3) 0.086(2.18) 0.076 (1.93) 0.160 (4.1) 0.140 (3.5) 0.225 (5.7) 0.205 (5.2) 0.127 (3.22) 0.117 (2.97) 0.048 (1.22) 0.044 (1.12) 0.795 (20.2) 0.775 (19.6) 0.840 (21.3) 0.820 (20.8) 1 2 3 0.078 (1.98) REF. 0.203 (5.16) 0.193 (4.90) 10° TYP. Both Sides 30° 10 1° REF. Both Sides 0.030 (0.76) 0.020 (0.51) 0.118 (3.0) 0.108 (2.7) |
