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T8514VB-SF-F Datasheet(PDF) 2 Page - Vishay Siliconix

Part # T8514VB-SF-F
Description  Specification of GaAlAs IR Emitting Diode Chip
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

T8514VB-SF-F Datasheet(HTML) 2 Page - Vishay Siliconix

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For technical questions, contact: optochipsupport@vishay.com
Document Number: 81129
2
Rev. 1.3, 29-Mar-10
T8514VB
Vishay Semiconductors Specification of GaAlAs IR Emitting
Diode Chip
Notes
(1) Tamb = 25 °C, unless otherwise specified
(2) The measurements are based on samples of die which are mounted on a TO-18 gold header without resin coating
(3) The radiant intensity, Ie, is measured on the geometric axis of the TO-18 header
(4) The radiant power,
φ
e, is measured with chip on bare plate and aperture angle about 30°, as indicated on the label of each wafer
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 1 - Relative Spectral Emission
φ
e rel = f (λ)
Fig. 2 - Radiant Characteristics
Irel = f(ϕ)
DIMENSIONS
Fig. 3
BASIC CHARACTERISTICS (1)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 100 mA
VF
1.44
V
Radiant power (2)
IF = 100 mA
φ
e
23
mW
Radiant intensity (3)
IF = 100 mA
Ie
3.3
mW/sr
Radiant power
(epoxy encapsulated)
IF = 100 mA
φ
e
52
mW
Radiant power chip (4)
IF = 50 mA
φ
e
4.5
5.9
mW
Temperature coefficient of radiant
power
IF = 100 mA
TKφe
- 0.35
%/K
Reverse voltage
IR = 10 µA
VR
518
V
Temperature coefficient of forward
voltage
IF = 1 mA
TKVF
- 1.8
mV/K
Angle of half intensity
IF = 100 mA
ϕ
> ± 80
deg
Peak wavelength
IF = 30 mA
λ
p
850
nm
Spectral bandwidth
IF = 30 mA
λ
0.5
34
nm
Rise time/fall time
IF = 100 mA
tr, tf
25
50
ns
700
750
800
850
900
950
1000 1050
0
0.25
0.5
0.75
1.0
1.25
λ - Wavelength (nm)
21595
I
F = 30 mA
Relative Angular Intensity
100
50
0
50
100
90°
80°
70°
60°
50°
40°
30°
20°
10°
- 80°
- 70°
- 60°
- 50°
- 40°
- 30°
- 20°
- 10°
21596
N (cathode) side
Electrode pattern:
P (anode) side
Sectional view (schematic):
anode
P-type GaAlAs
N-type GaAlAs
P-type GaAlAs
typ. 140 µm
21597


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