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T8514VB-SF-F Datasheet(PDF) 2 Page - Vishay Siliconix |
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T8514VB-SF-F Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page www.vishay.com For technical questions, contact: optochipsupport@vishay.com Document Number: 81129 2 Rev. 1.3, 29-Mar-10 T8514VB Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip Notes (1) Tamb = 25 °C, unless otherwise specified (2) The measurements are based on samples of die which are mounted on a TO-18 gold header without resin coating (3) The radiant intensity, Ie, is measured on the geometric axis of the TO-18 header (4) The radiant power, φ e, is measured with chip on bare plate and aperture angle about 30°, as indicated on the label of each wafer BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 1 - Relative Spectral Emission φ e rel = f (λ) Fig. 2 - Radiant Characteristics Irel = f(ϕ) DIMENSIONS Fig. 3 BASIC CHARACTERISTICS (1) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 100 mA VF 1.44 V Radiant power (2) IF = 100 mA φ e 23 mW Radiant intensity (3) IF = 100 mA Ie 3.3 mW/sr Radiant power (epoxy encapsulated) IF = 100 mA φ e 52 mW Radiant power chip (4) IF = 50 mA φ e 4.5 5.9 mW Temperature coefficient of radiant power IF = 100 mA TKφe - 0.35 %/K Reverse voltage IR = 10 µA VR 518 V Temperature coefficient of forward voltage IF = 1 mA TKVF - 1.8 mV/K Angle of half intensity IF = 100 mA ϕ > ± 80 deg Peak wavelength IF = 30 mA λ p 850 nm Spectral bandwidth IF = 30 mA λ 0.5 34 nm Rise time/fall time IF = 100 mA tr, tf 25 50 ns 700 750 800 850 900 950 1000 1050 0 0.25 0.5 0.75 1.0 1.25 λ - Wavelength (nm) 21595 I F = 30 mA Relative Angular Intensity 100 50 0 50 100 90° 80° 70° 60° 50° 40° 30° 20° 10° 0° - 80° - 70° - 60° - 50° - 40° - 30° - 20° - 10° 0° 21596 N (cathode) side Electrode pattern: P (anode) side Sectional view (schematic): anode P-type GaAlAs N-type GaAlAs P-type GaAlAs typ. 140 µm 21597 |
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