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ST110S12P2LPBF Datasheet(PDF) 6 Page - Vishay Siliconix |
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ST110S12P2LPBF Datasheet(HTML) 6 Page - Vishay Siliconix |
6 / 10 page www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94393 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 17-Aug-10 ST110SPbF Series Vishay Semiconductors Phase Control Thyristors (Stud Version), 110 A Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 9 - Gate Characteristics 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) ST110S Series Steady State Value R = 0.195 K/W (DC Operation) thJC 0.1 1 10 100 0.001 0.01 0.1 1 10 100 VGD IGD (b) (a) (1) (2) (3) Instantaneous Gate Current (A) a) Recommended load line for b) Recommended load line for <=30% rated di/dt : 10V, 10ohms Frequency Limited by PG(AV) rated di/dt : 20V, 10ohms; tr<=1 µs tr<=1 µs (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (4) PGM = 60W, tp = 0.66ms Device: ST110S Series Rectangular gate pulse (4) |
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