SMMA511DJ-T1-GE3 datasheet(9/14 Pages) VISHAY

Part #	SMMA511DJ-T1-GE3

Description	N- and P-Channel 12 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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9 / 14 page

Document Number: 65281

www.vishay.com

S09-2019-Rev. B, 05-Oct-09

9

SMMA511DJ

Vishay Siliconix

New Product

P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

Soure-Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

Safe Operating Area, Junction-to-Ambient

0.1

1

10

0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

TJ = 25 °C

TJ - Temperature (°C)

0.3

0.4

0.5

0.6

0.7

0.8

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

VGS - Gate-to-Source Voltage (V)

0.00

0.05

0.10

0.15

0.20

012345

ID = 3.3 A

125 °C

25 °C

1000

100

1

0.001

0.01

0.1

10

Pulse (s)

20

10

5

15

0

VDS - Drain-to-Source Voltage (V)

* VGS

minimum VGS at which RDS(on) is specified

10

0.1

1

10

1

TA = 25 °C

Single Pulse

1 ms

10 ms

100 ms

0.01

1 s

10 s

DC

BVDSS Limited

100

100 µs

Limited by

RDS(on)*

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SMMA511DJ-T1-GE3 Datasheet(PDF) 9 Page - Vishay Siliconix

SMMA511DJ-T1-GE3 Datasheet(HTML) 9 Page - Vishay Siliconix

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