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SIR882DP Datasheet(PDF) 4 Page - Vishay Siliconix |
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SIR882DP Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 13 page www.vishay.com 4 Document Number: 65932 S10-2681-Rev. B, 22-Nov-10 Vishay Siliconix SiR882DP New Product TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.001 0.0 0.2 0.6 1.0 0.4 0.8 1.2 0.01 1 0.1 10 100 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C - 0.8 - 50 - 25 25 75 125 0 50 100 150 - 0.6 - 0.2 - 0.4 0.0 0.2 0.4 T J - Junction Temperature (°C) I D = 5 mA I D = 250 μA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 02 6 4 15 38 79 10 0.04 0.03 0.02 0.01 0.05 VGS - Gate-to-Source Voltage (V) I D = 20 A T J = 25 °C T J = 125 °C 0 0.001 0.01 0.1 1 10 40 80 120 160 200 Time (s) Safe Operating Area, Junction-to-Ambient 0.01 0.01 0.1 1 100 10 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Limited by R DS(on)* BVDSS Limited T A = 25 °C Single Pulse 1 ms 10 ms 1 s 10 s 100 ms DC |
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