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SIR846DP-T1-GE3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SIR846DP-T1-GE3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 65171 S09-1810-Rev. A, 14-Sep-09 Vishay Siliconix SiR846DP New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 TJ = 25 °C TJ = 150 °C VSD -Source-to-Drain Voltage (V) - 1.5 - 1.0 - 0.5 0.0 0.5 1.0 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA ID =5mA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.008 0.016 0.024 0.032 0.040 02 4 6 8 10 TJ = 25 °C ID =20 A TJ = 125 °C VGS - Gate-to-Source Voltage (V) 0 40 80 120 160 200 0 1 1 1 0 0 . 00.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient 0.01 100 1 100 0.01 0.1 1ms 10 s 10 ms 0.1 1 10 10 TA = 25 °C Single Pulse Limited byRDS(on)* DC BVDSS Limited 1s 100 ms VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified |
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