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SIR492DP-T1-GE3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIR492DP-T1-GE3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 14 page www.vishay.com 2 Document Number: 68840 S-82288-Rev. B, 22-Sep-08 Vishay Siliconix SiR492DP New Product Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 70 °C/W. THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, b t ≤ 10 s RthJA 25 30 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 2.9 3.5 SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 12 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 12 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 3.1 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.4 1.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 12 V, VGS = 0 V 1 µA VDS = 12 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 15 A 0.0031 0.0038 Ω VGS = 2.5 V, ID = 10 A 0.0037 0.0047 Forward Transconductancea gfs VDS = 5 V, ID = 15 A 110 S Dynamicb Input Capacitance Ciss VDS = 6 V, VGS = 0 V, f = 1 MHz 3720 pF Output Capacitance Coss 1290 Reverse Transfer Capacitance Crss 840 Total Gate Charge Qg VDS = 6 V, VGS = 8 V, ID = 10 A 73 110 nC VDS = 6 V, VGS = 4.5 V, ID = 10 A 41 62 Gate-Source Charge Qgs 4.5 Gate-Drain Charge Qgd 8.5 Gate Resistance Rg f = 1 MHz 1.4 2.1 Ω Turn-On Delay Time td(on) VDD = 6 V, RL = 1.2 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 27 41 ns Rise Time tr 125 190 Turn-Off Delay Time td(off) 53 80 Fall Time tf 12 18 Turn-On Delay Time td(on) VDD = 6 V, RL = 1.2 Ω ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω 16 25 Rise Time tr 55 85 Turn-Off Delay Time td(off) 53 80 Fall Time tf 915 |
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