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SIR412DP Datasheet(PDF) 6 Page - Vishay Siliconix |
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SIR412DP Datasheet(HTML) 6 Page - Vishay Siliconix |
6 / 13 page www.vishay.com 6 Document Number: 65364 S09-2029-Rev. A, 05-Oct-09 Vishay Siliconix SiR412DP TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65364. Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 0 0 0 1 0 1 1 10-1 10-4 100 0.2 0.1 0.05 0.02 Square WavePulse Duration (s) 1 0.1 0.01 Duty Cycle = 0.5 t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70 °C/W 3. TJM -T A =PDMZthJA(t) t1 t2 4. Surface Mounted Single Pulse Normalized Thermal Transient Impedance, Junction-to-Case 10-3 10-2 0 1 1 10-1 10-4 0.2 0.1 Duty Cycle = 0.5 Square WavePulse Duration (s) 1 0.1 0.01 Single Pulse 0.02 0.05 |
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