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Document Number: 68626

S09-1338-Rev. B, 13-Jul-09

Vishay Siliconix

SiE726DF

New Product

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. Maximum under Steady State conditions is 68 °C/W.

c. Measured at source pin (on the side of the package).

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

≤ 10 s

20

24

°C/W

Maximum Junction-to-Case (Drain Top)

Steady State

0.8

1

2.2

2.7

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

30

V

Gate-Source Threshold Voltage

1

3

V

Gate-Source Leakage

± 100

nA

Zero Gate Voltage Drain Current

0.120

0.5

mA

1.0

10

25

A

0.0020

0.0024

Ω

0.0026

0.0033

90

S

Input Capacitance

7400

pF

Output Capacitance

1100

Reverse Transfer Capacitance

400

Total Gate Charge

105

160

nC

50

75

Gate-Source Charge

22

Gate-Drain Charge

12

Gate Resistance

f = 1 MHz

1

2

Ω

Turn-On Delay Time

60

90

ns

Rise Time

35

55

Turn-Off Delay Time

55

85

Fall Time

30

45

Turn-On Delay Time

20

30

Rise Time

10

15

Turn-Off Delay Time

55

85

Fall Time

10

15

Drain-Source Body Diode and Schottky Characteristics

Continuous Source-Drain Diode Current

60

A

80

Body Diode Voltage

0.37

0.45

V

Body Diode Reverse Recovery Time

40

60

ns

Body Diode Reverse Recovery Charge

30

45

nC

Reverse Recovery Fall Time

19

ns

Reverse Recovery Rise Time

21