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SIB457EDK-T1-GE3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SIB457EDK-T1-GE3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com 4 Document Number: 64816 S09-1497-Rev. B, 10-Aug-09 Vishay Siliconix SiB457EDK New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Gate Charge Soure-Drain Diode Forward Voltage Threshold Voltage 0 2 4 6 8 0 5 10 15 20 25 ID =6.8 A VDS =16 V VDS =5 V VDS =10 V Qg - Total Gate Charge (nC) 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 TJ = 150 °C TJ = 25 °C VSD -Source-to-Drain Voltage (V) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient 0.00 0.03 0.06 0.09 0.12 0.15 0 1 234 5 ID =1.5 A; TJ = 125 °C ID =4.8 A; TJ = 125 °C ID =4.8 A; TJ = 25 °C ID = 1.5 A; TJ = 25 °C VGS - Gate-to-Source Voltage (V) 1000 100 1 0.001 0.01 0.1 10 Pulse (s) 20 10 5 15 0 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 100 µs Limited byRDS(on)* BVDSS Limited 1ms 10 ms 100 ms 1 s, 10 s DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified |
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