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SIB410DK-T1-GE3 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # SIB410DK-T1-GE3
Description  N-Channel 30 V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIB410DK-T1-GE3 Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number: 67020
S10-2249-Rev. A, 04-Oct-10
Vishay Siliconix
SiB410DK
New Product
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
30
V
VDS Temperature Coefficient
V
DS/TJ
ID = 250 µA
31
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
- 2.7
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
0.4
1
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
10
A
Drain-Source On-State Resistancea
RDS(on)
VGS 4.5 V, ID = 3.8 A
0.034
0.042
VGS 2.5 V, ID = 3.6 A
0.038
0.046
VGS 1.8 V, ID = 2 A
0.041
0.052
Forward Transconductancea
gfs
VDS = 15 V, ID = 3.8 A
30
S
Dynamicb
Input Capacitance
Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
560
pF
Output Capacitance
Coss
60
Reverse Transfer Capacitance
Crss
27
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 3.4 A
10
15
nC
VDS = 15 V, VGS = 4.5 V, ID = 3.4 A
5.7
8.6
Gate-Source Charge
Qgs
0.85
Gate-Drain Charge
Qgd
0.75
Gate Resistance
Rg
f = 1 MHz
0.6
3
6
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 4.3 
ID  3.5 A, VGEN = 4.5 V, Rg = 1 
612
ns
Rise Time
tr
10
20
Turn-Off Delay Time
td(off)
20
40
Fall Time
tf
10
20
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 4.3 
ID  3.5 A, VGEN = 8 V, Rg = 1 
510
Rise Time
tr
10
20
Turn-Off Delay Time
td(off)
17
30
Fall Time
tf
10
20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
1.5
A
Pulse Diode Forward Current
ISM
20
Body Diode Voltage
VSD
IS = 3.5 A, VGS 0 V
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C
15
30
ns
Body Diode Reverse Recovery Charge
Qrr
612
nC
Reverse Recovery Fall Time
ta
8
ns
Reverse Recovery Rise Time
tb
7


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