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SIB410DK-T1-GE3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIB410DK-T1-GE3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number: 67020 S10-2249-Rev. A, 04-Oct-10 Vishay Siliconix SiB410DK New Product Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient V DS/TJ ID = 250 µA 31 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ - 2.7 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 0.4 1 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 10 A Drain-Source On-State Resistancea RDS(on) VGS 4.5 V, ID = 3.8 A 0.034 0.042 VGS 2.5 V, ID = 3.6 A 0.038 0.046 VGS 1.8 V, ID = 2 A 0.041 0.052 Forward Transconductancea gfs VDS = 15 V, ID = 3.8 A 30 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 560 pF Output Capacitance Coss 60 Reverse Transfer Capacitance Crss 27 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 3.4 A 10 15 nC VDS = 15 V, VGS = 4.5 V, ID = 3.4 A 5.7 8.6 Gate-Source Charge Qgs 0.85 Gate-Drain Charge Qgd 0.75 Gate Resistance Rg f = 1 MHz 0.6 3 6 Turn-On Delay Time td(on) VDD = 15 V, RL = 4.3 ID 3.5 A, VGEN = 4.5 V, Rg = 1 612 ns Rise Time tr 10 20 Turn-Off Delay Time td(off) 20 40 Fall Time tf 10 20 Turn-On Delay Time td(on) VDD = 15 V, RL = 4.3 ID 3.5 A, VGEN = 8 V, Rg = 1 510 Rise Time tr 10 20 Turn-Off Delay Time td(off) 17 30 Fall Time tf 10 20 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 1.5 A Pulse Diode Forward Current ISM 20 Body Diode Voltage VSD IS = 3.5 A, VGS 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C 15 30 ns Body Diode Reverse Recovery Charge Qrr 612 nC Reverse Recovery Fall Time ta 8 ns Reverse Recovery Rise Time tb 7 |
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