SIB406EDK datasheet(3/9 Pages) VISHAY

Part #	SIB406EDK

Description	N-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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3 / 9 page

Document Number: 69088

S-83095-Rev. A, 29-Dec-08

www.vishay.com

3

Vishay Siliconix

SiB406EDK

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Gate Current vs. Gate-Source Voltage

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

0

1

2

3

4

0369

12

15

18

VGS - Gate-to-Source Voltage (V)

IGSS at 25 °C

0

3

6

9

12

15

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS =5thru 3 V

VGS =1.5 V

VGS =2 V

VGS =2.5 V

VDS - Drain-to-Source Voltage (V)

0.00

0.03

0.06

0.09

0.12

0

369

12

15

VGS =4.5 V

VGS =2.5 V

ID - Drain Current (A)

Gate Current vs. Gate-Source Voltage

Transfer Characteristics

Capacitance

VGS - Gate-to-Source Voltage (V)

10-10

10-9

10-8

10-7

10-6

10-5

10-4

10-3

10-2

0

3

6

9

12

15

18

TJ = 150 °C

TJ = 25 °C

0

1

2

3

4

5

0.0

0.5

1.0

1.5

2.0

TC = 25 °C

TC = 125 °C

VGS - Gate-to-Source Voltage (V)

TC = - 55 °C

0

100

200

300

400

500

024

6

8

10

12

14

16

18

20

Ciss

Coss

Crss

VDS - Drain-to-Source Voltage (V)

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