SIA975DJ-T1-GE3 datasheet(3/9 Pages) VISHAY

Part #	SIA975DJ-T1-GE3

Description	Dual P-Channel 12-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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3 / 9 page

Document Number: 65710

S10-0213-Rev. A, 25-Jan-10

www.vishay.com

3

Vishay Siliconix

SiA975DJ

New Product

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

0.5

1.0

1.5

2.0

2.5

3.0

3

6

9

12

15

V

DS - Drain-to-Source Voltage (V)

2 V

1 V

1.5 V

VGS = 5 V thru 2.5 V

0.02

0369

12

15

0.04

0.08

0.12

0.16

0.06

0.10

0.14

I

D - Drain Current (A)

VGS = 4.5 V

VGS = 2.5 V

VGS = 1.8 V

0

3

6

9

12

15

18

Q

g - Total Gate Charge

0

2

4

6

8

VDS = 9.6 V

VDS = 3 V

VDS = 6 V

ID = 5.6 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

0.5

1.0

1.5

2.0

2

4

6

8

10

V

GS - Gate-to-Source Voltage (V)

TC = 125 °C

TC = - 55 °C

TC = 25 °C

0

0369

12

300

600

900

1200

1500

V

DS - Drain-to-Source Voltage (V)

C

oss

C

rss

C

iss

0.7

- 50

- 25

25

75

125

0

50

100

150

0.8

1.0

1.1

0.9

1.3

1.4

1.2

T

J - Junction Temperature (°C)

VGS = 1.8 V

ID = 1.5 A

VGS = 4.5 V, 2.5 V

ID = 4.3 A

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