SIA907EDJT-T1-GE3 datasheet(3/8 Pages) VISHAY

Part #	SIA907EDJT-T1-GE3

Description	Dual P-Channel 20 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 67874

S11-0862-Rev. A, 02-May-11

www.vishay.com

3

Vishay Siliconix

SiA907EDJT

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Gate Current vs. Gate-to-Source Voltage

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

VGS - Gate-to-Source Voltage (V)

0.0

0.1

0.2

0.3

0.4

0.5

0

3

6

9

12

15

18

TJ = 25 °C

0

3

6

9

12

15

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS =10 V thru 3 V

VGS =1.5 V

VGS =2.5 V

VGS =2 V

VDS - Drain-to-Source Voltage (V)

0.00

0.05

0.10

0.15

0.20

03

6

9

12

15

VGS = 2.5 V

VGS =4.5 V

ID - Drain Current (A)

Gate Current vs. Gate-to-Source Voltage

Transfer Characteristics

Capacitance

VGS - Gate-to-Source Voltage (V)

10-10

10-9

10-8

10-7

10-6

10-5

10-4

10-3

10-2

036

9

1 2

1 5

1 8

TJ = 150 °C

TJ = 25 °C

0

1

2

3

4

5

0.0

0.5

1.0

1.5

2.0

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

0

200

400

600

800

1000

0

5

10

15

20

V

DS - Drain-to-Source Voltage (V)

C

iss

C

oss

C

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