Document Number: 65706

S10-0214-Rev. A, 25-Jan-10

www.vishay.com

3

Vishay Siliconix

SiA533EDJ

New Product

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Total Gate Charge

N-Ch

10

15

nC

P-Ch

13

20

N-Channel

P-Channel

N-Ch

5.6

8.5

P-Ch

7.8

12

Gate-Source Charge

N-Ch

0.7

P-Ch

1.3

Gate-Drain Charge

N-Ch

0.85

P-Ch

2.3

Gate Resistance

f = 1 MHz

N-Ch

0.7

3.5

7

Ω

P-Ch

1.4

7

14

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Turn-On Delay Time

N-Channel

P-Channel

N-Ch

10

15

ns

P-Ch

15

25

Rise Time

N-Ch

10

15

P-Ch

15

25

Turn-Off Delay Time

N-Ch

20

30

P-Ch

25

40

Fall Time

N-Ch

10

15

P-Ch

10

15

Turn-On Delay Time

N-Channel

P-Channel

N-Ch

5

10

P-Ch

5

10

Rise Time

N-Ch

10

15

P-Ch

10

15

Turn-Off Delay Time

N-Ch

20

30

P-Ch

25

40

Fall Time

N-Ch

10

15

P-Ch

10

15

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

N-Ch

4.5

A

P-Ch

- 4.5

N-Ch

20

P-Ch

- 15

Body Diode Voltage

N-Ch

0.85

1.2

V

P-Ch

- 0.87

- 1.2

Body Diode Reverse Recovery Time

N-Channel

P-Channel

N-Ch

10

20

ns

P-Ch

25

50

Body Diode Reverse Recovery Charge

N-Ch

5

10

nC

P-Ch

10

20

Reverse Recovery Fall Time

N-Ch

5.5

ns

P-Ch

17

Reverse Recovery Rise Time

N-Ch

4.5

P-Ch

8