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SIA533EDJ Datasheet(PDF) 3 Page - Vishay Siliconix |
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SIA533EDJ Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 14 page Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 www.vishay.com 3 Vishay Siliconix SiA533EDJ New Product Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameter Symbol Test Conditions Min. Typ. Max. Unit Dynamica Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 5.9 A N-Ch 10 15 nC VDS = - 10 V, VGS = - 10 V, ID = - 4.7 A P-Ch 13 20 N-Channel VDS = 10 V, VGS = 4.5 V, ID = 5.9 A P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 4.7 A N-Ch 5.6 8.5 P-Ch 7.8 12 Gate-Source Charge Qgs N-Ch 0.7 P-Ch 1.3 Gate-Drain Charge Qgd N-Ch 0.85 P-Ch 2.3 Gate Resistance Rg f = 1 MHz N-Ch 0.7 3.5 7 Ω P-Ch 1.4 7 14 SPECIFICATIONS TJ = 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Dynamica Turn-On Delay Time td(on) N-Channel VDD = 6 V, RL = 1.3 Ω ID ≅ 4.8 A, VGEN = 4.5 V, Rg = 1 Ω P-Channel VDD = - 6 V, RL = 1.6 Ω ID ≅ - 3.7 A, VGEN = - 4.5 V, Rg = 1 Ω N-Ch 10 15 ns P-Ch 15 25 Rise Time tr N-Ch 10 15 P-Ch 15 25 Turn-Off Delay Time td(off) N-Ch 20 30 P-Ch 25 40 Fall Time tf N-Ch 10 15 P-Ch 10 15 Turn-On Delay Time td(on) N-Channel VDD = 6 V, RL = 1.3 Ω ID ≅ 4.8 A, VGEN = 8 V, Rg = 1 Ω P-Channel VDD = - 6 V, RL = 1.6 Ω ID ≅ - 3.7 A, VGEN = - 8 V, Rg = 1 Ω N-Ch 5 10 P-Ch 5 10 Rise Time tr N-Ch 10 15 P-Ch 10 15 Turn-Off Delay Time td(off) N-Ch 20 30 P-Ch 25 40 Fall Time tf N-Ch 10 15 P-Ch 10 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C N-Ch 4.5 A P-Ch - 4.5 Pulse Diode Forward Currenta ISM N-Ch 20 P-Ch - 15 Body Diode Voltage VSD IS = 4.8 A, VGS = 0 V N-Ch 0.85 1.2 V IS = - 3.7 A, VGS = 0 V P-Ch - 0.87 - 1.2 Body Diode Reverse Recovery Time trr N-Channel IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C P-Channel IF = - 3.7 A, dI/dt = - 100 A/µs, TJ = 25 °C N-Ch 10 20 ns P-Ch 25 50 Body Diode Reverse Recovery Charge Qrr N-Ch 5 10 nC P-Ch 10 20 Reverse Recovery Fall Time ta N-Ch 5.5 ns P-Ch 17 Reverse Recovery Rise Time tb N-Ch 4.5 P-Ch 8 |
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