SIA519EDJ-T1-GE3 datasheet(1/14 Pages) VISHAY

Part #	SIA519EDJ-T1-GE3

Description	N- and P-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SiA519EDJ

New Product

Document Number: 65176

S09-2685-Rev. B, 14-Dec-09

www.vishay.com

1

N- and P-Channel 20-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFETs

•

Typical ESD Protection: N-Channel 2000 V

P-Channel 1900 V

•

100 % Rg Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch for Portable

Devices

• DC/DC Converters

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A) Qg (Typ.)

N-Channel

20

0.040 at VGS = 4.5 V

4.5a

3.7 nC

0.065 at VGS = 2.5 V

4.5a

P-Channel

- 20

0.090 at VGS = - 4.5 V

- 4.5a

5.3 nC

0.137 at VGS = - 2.5 V

- 4.5a

Ordering Information: SiA519EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

Marking Code

X X X

E G X

Lot Traceability

and Date code

Part # code

S1

D1

G2

S2

G1

D2

1

6

5

4

2

3

2.05 mm

PowerPAK® SC-70-6 Dual

D1

D2

P-Channel MOSFET

N-Channel MOSFET

D2

S2

G2

S1

D1

G1

Notes:

a. Package Limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Solder Profile (

www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 110 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

VDS

20

- 20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

4.5a

- 4.5a

A

TC = 70 °C

4.5a

- 4.5a

TA = 25 °C

4.5a, b, c

- 3.7b, c

TA = 70 °C

4.4b, c

- 3b, c

Pulsed Drain Current

IDM

15

- 15

Source Drain Current Diode Current

TC = 25 °C

IS

4.5a

- 4.5a

TA = 25 °C

1.6b, c

- 1.6b, c

Maximum Power Dissipation

TC = 25 °C

PD

7.8

W

TC = 70 °C

55

TA = 25 °C

1.9b, c

TA = 70 °C

1.2b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

N-Channel

P-Channel

Unit

Typ.

Max.

Typ.

Max.

Maximum Junction-to-Ambientb, f

t

≤ 5 s

RthJA

52

65

52

65

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

12.5

16

12.5

16

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